13761090949
當前位置：首頁 > 產(chǎn)品中心 > 二維材料 > 硒化物晶體 > 硒化鍺晶體（百分之99.995）GeSe
簡要描述：硒化鍺晶體 GeSe （Germanium Selenide）晶體尺寸：~10毫米電學性能：半導體晶體結(jié)構(gòu)：斜方晶系晶胞參數(shù)：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°晶體類型：合成晶體純度：＞99.995%
產(chǎn)品型號： 廠商性質(zhì)：生產(chǎn)廠家更新時間：2025-05-07訪 問 量：2000相關(guān)文章
Related Articles詳細介紹
硒化鍺晶體 GeSe (Germanium Selenide)
晶體尺寸：~10毫米
電學性能：半導體
晶體結(jié)構(gòu)：斜方晶系
晶胞參數(shù)：a = 0.383 nm, b = 0.440 nm, c = 1.078 nm, α = β = γ = 90°
晶體類型：合成
晶體純度：＞99.995%
X-ray diffraction on a GeSe single crystal aligned along the (100) plane. XRD was performed at room temperature using a D8 Venture Bruker. The 4 XRD peaks correspond, from left to right, to (h00) with h = 2, 4, 6, 8
Powder X-ray diffraction (XRD) of a single crystal GeSe. X-ray diffraction was performed at room temperature using a D8 Venture Bruker.
Stoichiometric analysis of a single crystal GeSe by Energy-dispersive X-ray spectroscopy (EDX).
Raman spectrum of a single crystal GeSe. Measurement was performed with a 785 nm Raman system at room temperature.
產(chǎn)品咨詢
聯(lián)系我們
上海巨納科技有限公司 公司地址：上海市虹口區(qū)寶山路778號海倫國際大廈5樓 技術(shù)支持：化工儀器網(wǎng)掃一掃 更多精彩
微信二維碼
網(wǎng)站二維碼
歡迎來到