日韩欧美亚洲中文字幕,日韩欧美亚洲综合,日韩欧美亚洲综合国产,日韩欧美亚洲综合在线,日韩欧美一,日韩欧美一二区,日韩欧美一二三,日韩欧美一二三区

咨詢熱線

13761090949

當前位置:首頁   >  產品中心  >  二維材料  >  硒化物晶體  >  n-type MoSe2 crystals N型二硒化鉬晶體

n-type MoSe2 crystals N型二硒化鉬晶體

簡要描述:Years of growth optimization lead to our flawless n-type MoSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

  • 產品型號:
  • 廠商性質:生產廠家
  • 更新時間:2025-05-07
  • 訪  問  量:1106

詳細介紹

Years of growth optimization lead to our flawless n-type MoSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field. Our n-type MoSe2 crystals are doped with Re or Au atoms at ~1E17-1E18 cm-3 range. However, if your research  requires other types or concentration of dopants please contact us. Intentionally doped MoSe2 crystals from 2Dsemiconductors are known for its superior valleytronic performance, perfect crystallization, defect free structure, extremely narrow PL bandwidths, clean PL spectra (free of bound exciton shoulders), and high carrier mobility. Thousands of scientific articles have cited us and used these crystals for scientific accuracy and clean signals. Please also see our n- and p-type MoSe2 crystals doped with Au, Re, Nb, or other transition metal atoms. Please note that doping into TMDCs greatly reduce the crystallization time (growth speeds), thus electronically doped TMDCs measure smaller than undoped (intrinsic) TMDCs.

Single crystal n-type MoSe2 characteristics

Growth method matters> Flux zone or CVT growth method? Contamination of halides and point defects in layered crystals are well known cause for their reduced electronic mobility, reduced anisotropic response, poor e-h recombination, low-PL emission, and lower optical absorption. Flux zone technique is a halide free technique used for synthesizing truly semiconductor grade vdW crystals. This method distinguishes itself from chemical vapor transport (CVT) technique in the following regard: CVT is a quick (~2 weeks) growth method but exhibits poor crystalline quality and the defect concentration reaches to 1E11 to 1E12 cm-2 range. In contrast, flux method takes long (~3 months) growth time, but ensures slow crystallization for perfect atomic structuring, and impurity free crystal growth with defect concentration as low as 1E9 - 1E10 cm-2. During check out just state which type of growth process is preferred. Unless otherwise stated, 2Dsemiconductors ships Flux zone crystals as a default choice.

http://meetings.aps.org/Meeting/MAR18/Session/K36.3

http://meetings.aps.org/Meeting/MAR17/Session/V1.14

Summary of available doped layered materials

MoS2; n-type and p-type available (via Nb, Co, Ni, Au, or Re dopants)

WS2; n-type and p-type available (via Au or Nb doping;

WSe2; n-type and p-type available (via Re or Nb doping)

MoSe2 ; n-type and p-type available (via Re or Nb doping)

Black phosphorus; n-type or p-type doping available (via Br or As doping)

ReX2 (X=S, Se); n-type or p-type doping available (via Mo or Nb doping)

Bi2X3 (X=S,Se, and Te); n-type or p-type doping available (via Ca doping)

產品咨詢

留言框

  • 產品:

  • 您的單位:

  • 您的姓名:

  • 聯系電話:

  • 常用郵箱:

  • 省份:

  • 詳細地址:

  • 補充說明:

  • 驗證碼:

    請輸入計算結果(填寫阿拉伯數字),如:三加四=7

聯系我們

上海巨納科技有限公司 公司地址:上海市虹口區寶山路778號海倫國際大廈5樓   技術支持:化工儀器網
  • 聯系人:袁文軍
  • QQ:494474517
  • 公司座機:86-021-56830191
  • 郵箱:[email protected]

掃一掃 更多精彩

微信二維碼

網站二維碼

主站蜘蛛池模板: 国产精品嫩草影院8Vv8 | 国产一区二区三区不卡在线观看 | 国产51呦呦在线观看 | 官方AV资源网站 | 午夜两性网 | 日韩精品青青精品视频 | 午夜伦伦| 免费国产一级 片内射视频播 | 91在线精品亚 | 三级国产在线www | 成人欧美精品大91 | 国产电影在线观看 | 日韩福利视颁精品专区 | 亚洲91综合狠狠 | 欧美一级乱理片免费观看 | 亚洲国产综合久久99 | 国产亚洲精品yxsp | 日日婷婷夜日日天干 | 国产乱人激情h在线观看 | 国产免费网站看v片在线软件 | 制服丝袜第一页在线 | 区视频免费| 国产91精品久久久久久 | 国产91福利 | 性色av一区二区三区咪爱四虎 | 午夜成人日韩 | 免费看久久三级片 | 欧美一级高清片国产特黄大片 | 无码专区免费观看 | 白嫩少妇无套高清 | 国产高清无码不卡 | 精品无码久久久久久久久果糖心 | 国产 日韩 一线 二线 在线 | 亚洲午夜福利在线视频 | 日产精品久久久精品一区二区 | 亚洲精品国产综合久久一线 | 色综合久久综合欧美网 | 欧美大片| 天天干夜夜 | 国产国内精品在线观看 | 亚洲av无码国产成人久久软件 |